Modelling silicon characterisation

被引：27

作者：

Cuevas, Andres ^{[1
]}

机构：

[1] Australian Natl Univ, Sch Engn, Canberra, ACT 0200, Australia

来源：

PROCEEDINGS OF THE SILICONPV 2011 CONFERENCE (1ST INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS) | 2011年 / 8卷

关键词：

Modelling; characterisation; RECOMBINATION;

D O I：

10.1016/j.egypro.2011.06.108

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

A versatile computer model is presented for the simulation of several characterization techniques commonly used to determine the electronic properties of silicon wafers and solar cells. Several different sets of empirical data for carrier mobility and carrier recombination in crystalline silicon can be optionally selected to investigate their impact on device performance. The model is applicable to arbitrary carrier injection conditions and compensated doping. It is an advanced tool that permits to predict the outcome of characterization experiments, design new ones, or to perform in-depth post-measurement analysis and diagnosis of silicon materials. (C) 2011 Published by Elsevier Ltd. Selection and/or peer-review under responsibility of SiliconPV 2011.

引用

页码：94 / 99

页数：6

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