Theoretical study of the gap evolution of In2X3 (X = O, S, Se, Te) with lattice compression

被引：9
|
作者：
Robles, R
Vega, A
Mokrani, A
机构：
[1] Univ Nantes, Grp Phys Solides Elect, Fac Sci & Tech, F-44322 Nantes 3, France
[2] Univ Valladolid, Dept Fis Teor Atom Mol & Nucl, E-47011 Valladolid, Spain
来源：
OPTICAL MATERIALS | 2001年 / 17卷 / 04期
关键词：
semiconductors; electronic structure;
D O I：
10.1016/S0925-3467(01)00110-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report a systematic study of the electronic structure of In2X3 (X = O, S, Se, Te) semi-conductors using the ab initio tight-binding linear muffin-tin orbital (TB-LMTO) method. Taking into account the experimental structure of each compound we have determined the gap evolution under lattice compression in the whole series. We have found that the compression of the lattice produces an enhancement of the energy gap. This could be driven in some cases by doping with shallow impurities. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：497 / 499
页数：3
相关论文
共 50 条
  • [31] Two-photon excitation in H2X (X = O, S, Se, Te)
    Wang Hong-Bin
    Jiang Gang
    Zhu Zheng-He
    Wan Ming-Jie
    ACTA PHYSICA SINICA, 2013, 62 (19)
  • [32] X-RAY SPECTROSCOPIC STUDY OF VALENCY OF COPPER IN SPINELS CUCR-2X-4 (X=O,S,SE,TE)
    BALLAL, MM
    MANDE, C
    SOLID STATE COMMUNICATIONS, 1976, 19 (04) : 325 - 327
  • [33] Theoretical estimates of the anapole magnetizabilities of C4H4X2 cyclic molecules for X=O, S, Se, and Te
    Pagola, G. I.
    Ferraro, M. B.
    Provasi, P. F.
    Pelloni, S.
    Lazzeretti, P.
    JOURNAL OF CHEMICAL PHYSICS, 2014, 141 (09):
  • [34] Thermoelectric properties of ferroelectric α-In 2 X 3 (X = S, Se, Te) monolayers: A first-principles study
    Yang, Xue
    Chen, Anmin
    MATERIALS TODAY COMMUNICATIONS, 2024, 41
  • [35] Prediction of Formation of AB3X3 (X = S, Se, Te)
    Kiselyova, N. N.
    INORGANIC MATERIALS, 2009, 45 (10) : 1077 - 1080
  • [36] Prediction of formation of AB3X3 (X = S, Se, Te)
    N. N. Kiselyova
    Inorganic Materials, 2009, 45 : 1077 - 1080
  • [37] Study of Lattice Parameter and Nanoparticle Size in Lead Chalcogenides (PbX, X = S, Se & Te)
    Adhikari, D. R.
    Adhikari, S. K.
    Lamichhane, P.
    JORDAN JOURNAL OF PHYSICS, 2019, 12 (03): : 241 - 245
  • [38] Many-body effects on the width of the band gap in Bi2Te2X (X = Te, Se, S) topological insulators
    I. P. Rusinov
    I. A. Nechaev
    E. V. Chulkov
    JETP Letters, 2013, 98 : 397 - 402
  • [39] Many-body effects on the width of the band gap in Bi2Te2X (X = Te, Se, S) topological insulators
    Rusinov, I. P.
    Nechaev, I. A.
    Chulkov, E. V.
    JETP LETTERS, 2013, 98 (07) : 397 - 402
  • [40] POINT-DEFECTS IN THE MIXED CHALCOGENIDES BI(2)TE(3-X)X(X)(X=S, SE)
    HORAK, J
    STARY, Z
    VOTINSKY, J
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1994, 69 (01): : 31 - 38
12345