Theoretical study of the gap evolution of In2X3 (X = O, S, Se, Te) with lattice compression

被引：9
|
作者：
Robles, R
Vega, A
Mokrani, A
机构：
[1] Univ Nantes, Grp Phys Solides Elect, Fac Sci & Tech, F-44322 Nantes 3, France
[2] Univ Valladolid, Dept Fis Teor Atom Mol & Nucl, E-47011 Valladolid, Spain
来源：
OPTICAL MATERIALS | 2001年 / 17卷 / 04期
关键词：
semiconductors; electronic structure;
D O I：
10.1016/S0925-3467(01)00110-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report a systematic study of the electronic structure of In2X3 (X = O, S, Se, Te) semi-conductors using the ab initio tight-binding linear muffin-tin orbital (TB-LMTO) method. Taking into account the experimental structure of each compound we have determined the gap evolution under lattice compression in the whole series. We have found that the compression of the lattice produces an enhancement of the energy gap. This could be driven in some cases by doping with shallow impurities. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：497 / 499
页数：3
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