Surface reaction of ZnO nanowires with electron-beam generated alumina vapor

被引:17
作者
Fan, Hong Jin [1 ,2 ]
Lotnyk, Andriy [1 ]
Scholz, Roland [1 ]
Yang, Yang [1 ]
Kim, Dong Sik [1 ]
Pippel, Eckhard [1 ]
Senz, Stephan [1 ]
Hesse, Dietrich [1 ]
Zacharias, Margit [1 ,3 ]
机构
[1] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany
[2] Univ Cambridge, Dept Earth Sci, Cambridge CB2 3EQ, England
[3] Univ Freiburg, Fac Sci Appl IMTEK, D-79110 Freiburg, Germany
关键词
D O I
10.1021/jp712135p
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Single-crystal ZnO nanowires are reacted at 800-900 degrees C in vacuum with alumina vapor generated by electron beam evaporation. The morphology changes after the solid-vapor reactions are studied in detail using electron microscopy and compared to other similar spine1 nanostructures. Unlike other solid-vapor reactions like MgO-Al2O3 and ZnO-Ga2O3 where a continuous spinel layer is formed, the reaction of ZnO nanowires with alumina vapor is unique. The initially smooth surfaces of ZnO nanowires become rugged due to surface decomposition without the growth of spinel layers. A formation mechanism is proposed that the surface reaction of ZnO with alumina vapor might constitute a process of a unilateral transport of ZnO and the associated surface diffusion.
引用
收藏
页码:6770 / 6774
页数:5
相关论文
共 47 条
  • [1] [Anonymous], 1974, SOLID STATE REACTION
  • [2] Synthesis of blue-light-emitting ZnGa2O4 nanowires using chemical vapor deposition
    Bae, SY
    Seo, HW
    Na, CW
    Park, J
    [J]. CHEMICAL COMMUNICATIONS, 2004, (16) : 1834 - 1835
  • [3] Helical structure of single-crystalline ZnGa2O4 nanowires
    Bae, SY
    Lee, J
    Jung, H
    Park, J
    Ahn, JP
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2005, 127 (31) : 10802 - 10803
  • [4] BENGTSON B, 1947, ARK KEM MINERAL GEOL, V24, P1
  • [6] THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES
    BURTON, WK
    CABRERA, N
    FRANK, FC
    [J]. PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) : 299 - 358
  • [8] Formation of well-aligned ZnGa2O4 nanowires from Ga2O3/ZnO core-shell nanowires via a Ga2O3/ZnGa2O4 epitaxial relationship
    Chang, KW
    Wu, JJ
    [J]. JOURNAL OF PHYSICAL CHEMISTRY B, 2005, 109 (28) : 13572 - 13577
  • [9] Transmission electron microscopy study of pseudoperiodically twinned Zn2SnO4 nanowires
    Chen, HY
    Wang, JX
    Yu, HC
    Yang, HX
    Xie, SS
    Li, JQ
    [J]. JOURNAL OF PHYSICAL CHEMISTRY B, 2005, 109 (07) : 2573 - 2577
  • [10] Vapour-transport-deposition growth of ZnO nanostructures:: switch between c-axial wires and a-axial belts by indium doping
    Fan, HJ
    Fuhrmann, B
    Scholz, R
    Himcinschi, C
    Berger, A
    Leipner, H
    Dadgar, A
    Krost, A
    Christiansen, S
    Gösele, U
    Zacharias, M
    [J]. NANOTECHNOLOGY, 2006, 17 (11) : S231 - S239