Effects of Total-Ionizing-Dose Irradiation on Single-Event Burnout for Commercial Enhancement-Mode AlGaN/GaN High-Electron Mobility Transistors

被引：10

作者：

Chen, Si-Yuan ^{[1
,2
,3
]}

Yu, Xin ^{[1
,2
]}

Lu, Wu ^{[1
,2
]}

Yao, Shuai ^{[1
,2
,3
]}

Li, Xiao-Long ^{[1
,2
,3
]}

Wang, Xin ^{[1
,2
]}

Liu, Mo-Han ^{[1
,2
]}

Xi, Shan-Xue ^{[1
,2
,3
]}

Wang, Li-Bin ^{[1
,2
]}

Sun, Jing ^{[1
,2
]}

He, Cheng-Fa ^{[1
,2
]}

Guo, Qi ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Key Lab Funct Mat & Devices Special Environm, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China

[2] Xinjiang Key Lab Elect Informat Mat & Device, Urumqi 830011, Peoples R China

[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2020年 / 37卷 / 04期

基金：

中国国家自然科学基金;

关键词：

61; 80; -x; 85; 30; Tv; 84; Jc; GAMMA-IRRADIATION; HEMTS; IMPACT; DC;

D O I：

10.1088/0256-307X/37/4/046101

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We investigate the synergism effect of total ionizing dose (TID) on single-event burnout (SEB) for commercial enhancement-mode AlGaN/GaN high-electron mobility transistors. Our experimental results show that the slight degradation of devices caused by gamma rays can affect the stability of the devices during the impact of high energy particles. During heavy ion irradiation, the safe working values of drain voltage are significantly reduced for devices which have already been irradiated by Co-60 gamma rays before. This could be attributed to more charges trapped caused by Co-60 gamma rays, which make GaN devices more vulnerable to SEB. Moreover, the electrical parameters of GaN devices after Co-60 gamma and heavy-ion irradiations are presented, such as the output characteristic curve, effective threshold voltages, and leakage current of drain. These results demonstrate that the synergistic effect of TID on SEB for GaN power devices does in fact exist.

引用

页数：4

共 20 条

[1] 60Co gamma radiation effects on DC, RF, and pulsed I-V characteristics of AlGaN/GaN HEMTs [J].