Characterization and Modeling of Breakdown Probability in Sub-Micrometer CMOS SPADs

被引：44
作者：
Pancheri, Lucio [1 ]
Stoppa, David [2 ]
Betta, Gian-Franco Dalla [1 ]
机构：
[1] Univ Trento, Dept Ind Engn, I-38123 Trento, Italy
[2] Fdn Bruno Kessler, I-38123 Trento, Italy
来源：
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2014年 / 20卷 / 06期
关键词：
Single-photon avalanche diode (SPAD); avalanche breakdown probability; breakdown voltage; dead-space model; PHOTON AVALANCHE-DIODE; IONIZATION RATES; SILICON; NOISE; VOLTAGE; SENSOR; GAIN;
D O I：
10.1109/JSTQE.2014.2327791
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents the characterization of two different single-photon avalanche diodes fabricated in a standard 0.15 mu m CMOS process and the modeling of their breakdown probability. The first device is based on a p+/nwell abrupt junction, while the second one has a pwell/n-iso diffused junction. Breakdown voltage and breakdown probability are modeled using both local and dead-space models. While the two models are in agreement for the prediction of breakdown voltage, it is shown that the local model largely underestimates the breakdown probability with respect to experimental results. On the contrary, the voltage and wavelength dependence of breakdown probability can be correctly predicted using the dead-space model.
引用
收藏
页码：328 / 335
页数：8
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