Low-temperature spatially resolved micro-photoluminescence mapping in CdZnTe single crystals

被引：21

作者：

Yang, G. ^{[1
]}

Bolotnikov, A. E. ^{[1
]}

Cui, Y. ^{[1
]}

Camarda, G. S. ^{[1
]}

Hossain, A. ^{[1
]}

Kim, K. H. ^{[1
]}

Gul, R. ^{[1
]}

James, R. B. ^{[1
]}

机构：

[1] Brookhaven Natl Lab, Upton, NY 11973 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 26期

关键词：

CDTE; COMPENSATION; LUMINESCENCE;

D O I：

10.1063/1.3603930

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We utilized a low-temperature spatially resolved micro-photoluminescence mapping technique to investigate the spatial variation of photoluminescence- and electronic-defect states in areas of CdZnTe (CZT) single crystals containing structural-imperfections. Photoluminescence mapping of the donor-bound-exciton emission reveals an unexpected blue-shift of the CZT bandgap at Te inclusions, which indicates that for optical measurements the localized strain field needs to be considered for accurate calculation of Zn composition and energy levels near micro-scale defects. We observed that the line widths of the donor-bound-exciton peak and defect-related D band are broadened in regions with a high density of dislocations; in contrast, the donor-acceptor-pair peak is narrowed. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3603930]

引用

页数：3