Kinematical calculations of RHEED intensity oscillations during the growth of thin epitaxial films

被引：9
作者：
Daniluk, A [1 ]
机构：
[1] Marie Curie Sklodowska Univ, Inst Comp Sci, Dept Appl Comp Sci, PL-20031 Lublin, Poland
来源：
COMPUTER PHYSICS COMMUNICATIONS | 2005年 / 170卷 / 03期
关键词：
reflection high-energy electron diffraction (RHEED); Molecular Beam Epitaxy (MBE); computer simulations; non-linear differential equations; Unified Modeling Language (UML);
D O I：
10.1016/j.cpc.2005.04.005
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
A practical computing algorithm working in real time has been developed for calculating the reflection high-energy electron diffraction (RHEED) from the molecular beam epitaxy (MBE) growing surface. The calculations are based on the use of kinematical diffraction theory. Simple mathematical models are used for the growth simulation in order to investigate the fundamental behaviors of reflectivity change during the growth of thin epitaxial films prepared using MBE.
引用
收藏
页码：265 / 286
页数：22
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