Application of Wafer Direct Bonding Technique to Optical Nonreciprocal Devices

被引:1
作者
Mizumoto, Tetsuya [1 ]
Takei, Ryohei [1 ]
机构
[1] Tokyo Inst Technol, Dept Elect & Elect Engn, Tokyo 1528552, Japan
来源
IEEE PHOTONICS JOURNAL | 2011年 / 3卷 / 03期
基金
日本学术振兴会;
关键词
Photonic integrated circuit; magnetooptic garnet; direct bonding; optical isolator; optical circulator; MAGNETOOPTICAL GARNET-FILMS; GUIDING LAYER; PHASE-SHIFT; ISOLATOR; SEMICONDUCTOR; PROPAGATION; AMPLIFIER; DESIGN;
D O I
10.1109/JPHOT.2011.2131641
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A wafer direct bonding technique enables one to integrate dissimilar crystals like a magnetooptic garnet on Si and III-V semiconductors, which facilitates fabrication of optical nonreciprocal devices on commonly used waveguide platforms. The surface-activated direct bonding technique is described, focusing on the change of surface roughness due to the surface activation process with oxygen or argon plasma irradiation. The interferometric waveguide optical isolator that uses magnetooptic nonreciprocal phase shift is fabricated by directly bonding a magnetooptic garnet onto a silicon rib waveguide. An isolation of 21 dB is obtained at a wavelength of 1.56 mu m. The interferometric optical isolator can be modified to a waveguide optical circulator. The calculated performance of the waveguide optical circulator is also shown in this paper.
引用
收藏
页码:588 / 596
页数:9
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