Dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) thin-film transistors with improved performance and stability

被引:147
|
作者
Zschieschang, Ute [1 ]
Ante, Frederik [1 ]
Kaelblein, Daniel [1 ]
Yamamoto, Tatsuya [2 ]
Takimiya, Kazuo [2 ]
Kuwabara, Hirokazu [3 ]
Ikeda, Masaaki [3 ]
Sekitani, Tsuyoshi [4 ]
Someya, Takao [4 ]
Blochwitz-Nimoth, Jan [5 ]
Klauk, Hagen [1 ]
机构
[1] Max Planck Inst Solid State Res, D-70569 Stuttgart, Germany
[2] Hiroshima Univ, Dept Appl Chem, Grad Sch Engn, Inst Adv Mat Res, Higashihiroshima 724, Japan
[3] Nippon Kayaku Co Ltd, Funct Chem R&D Labs, Kita Ku, Tokyo 115, Japan
[4] Univ Tokyo, Dept Elect Engn, Tokyo 113, Japan
[5] Novaled AG, Dresden, Germany
关键词
Organic thin-film transistors; Air stability; Bias-stress stability; FIELD-EFFECT TRANSISTORS; ORGANIC SEMICONDUCTOR; LARGE-AREA; DISPLAYS; DRIVEN; AIR; CIRCUITS; LIFETIME; MOBILITY;
D O I
10.1016/j.orgel.2011.04.018
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Organic thin-film transistors based on the vacuum-deposited small-molecule conjugated semiconductor dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) have been fabricated and characterized. The transistors have field-effect mobilities as large as 2 cm(2)/V s and an on/off ratio of 10(8). Owing to the large ionization potential of DNTT, the TFTs show excellent stability for periods of several months of storage in ambient air. Unipolar ring oscillators based on DNTT TFTs with a channel length of 10 mu m oscillate with a signal propagation delay as short as 7 mu sec per stage at a supply voltage of 5 V. We also show that DNTT TFTs with usefully small channel width/length ratio are able to drive blue organic LEDs to a brightness well above that required for active-matrix displays. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:1370 / 1375
页数:6
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