Fabrication and characterization of NbN, AlN and NbN/AlN/NbN on MgO substrates

被引:13
作者
Kang, L [1 ]
Wu, PH [1 ]
Sh, JR [1 ]
Cai, WX [1 ]
Yang, SZ [1 ]
Ji, ZM [1 ]
Wang, Z [1 ]
机构
[1] Nanjing Univ, RISE, Dept Elect Sci & Engn, Nanjing, Peoples R China
关键词
D O I
10.1088/0953-2048/16/12/021
中图分类号
O59 [应用物理学];
学科分类号
摘要
At ambient substrate temperatures, NbN and AlN thin films as well as NbN/AlN/NbN sandwiches are prepared on single crystal MgO substrates, using direct current (dc) or radio frequency (RF) magnetron sputtering techniques. Excellent single crystal orientations of these structures are revealed by x-ray diffraction and transmission electron microscopy (TEM), while x-ray photoelectron spectroscope (XPS) shows that the stoichiometric composition of the NbN films is 1: 0.9 (Nb:N). Furthermore, AFM (atomic force microscope) scans indicate a root mean square (rms) roughness of 0.755 nm for AlN/NbN, and 0.83 nm for AlN, both over an area of 5 mum x 5 mum.
引用
收藏
页码:1417 / 1421
页数:5
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