Effect of impact ionization in the InGaAs absorber on excess noise of avalanche photodiodes

被引：22

作者：

Ng, JS ^{[1
]}

Tan, CH ^{[1
]}

David, JPR ^{[1
]}

Rees, GJ ^{[1
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2005年 / 41卷 / 08期

基金：

英国工程与自然科学研究理事会;

关键词：

avalanche photodiodes; impact ionization; noise;

D O I：

10.1109/JQE.2005.850700

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of impact ionization in the InGaAs absorption layer on the multiplication, excess noise and breakdown voltage are modeled for avalanche photodiodes (APDs), both with InP and with InAlAs multiplication regions. The calculations allow for dead space effects and for the low field electron ionization observed in InGaAs. The results confirm that impact ionization in the InGaAs absorption layer increases the excess noise in InP AM and that the effect imposes tight constraints on the doping of the charge control layer if avalanche noise is to be minimized. However, the excess noise of InAlAs APDs is predicted to be reduced by impact ionization in the InGaAs layer. Furthermore the breakdown voltage of InAlAs AM is less sensitive to ionization in the InGaAs layer and these results increase tolerance to doping variations in the field control layer.

引用

页码：1092 / 1096

页数：5

共 15 条

[1] Recent advances in avalanche photodiodes [J].

Campbell, JC ;

Demiguel, S ;

Ma, F ;

Beck, A ;

Guo, XY ;

Wang, SL ;

Zheng, XG ;

Li, XW ;

Beck, JD ;

Kinch, MA ;

Huntington, A ;

Coldren, LA ;

Decobert, J ;

Tscherptner, N .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2004, 10 (04) :777-787

[2] ELECTRON AND HOLE IMPACT IONIZATION COEFFICIENTS IN INP DETERMINED BY PHOTOMULTIPLICATION MEASUREMENTS [J].

COOK, LW ;

BULMAN, GE ;

STILLMAN, GE .

APPLIED PHYSICS LETTERS, 1982, 40 (07) :589-591

[3] IN0.53GA0.47AS PHOTO-DIODES WITH DARK CURRENT LIMITED BY GENERATION-RECOMBINATION AND TUNNELING [J].

FORREST, SR ;

LEHENY, RF ;

NAHORY, RE ;

POLLACK, MA .

APPLIED PHYSICS LETTERS, 1980, 37 (03) :322-325

[4] EFFECT OF DEAD SPACE ON GAIN AND NOISE IN SI AND GAAS AVALANCHE PHOTODIODES [J].

HAYAT, MM ;

SARGEANT, WL ;

SALEH, BEA .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1992, 28 (05) :1360-1365

[5] A THEORY OF MULTIPLICATION NOISE [J].

HOLLENHORST, JN .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (03) :781-788

[6] MEASUREMENT OF ABSORPTION-COEFFICIENTS OF GA0.47IN0.53AS OVER THE WAVELENGTH RANGE 1.0-1.7-MU-M [J].

HUMPHREYS, DA ;

KING, RJ ;

JENKINS, D ;

MOSELEY, AJ .

ELECTRONICS LETTERS, 1985, 21 (25-2) :1187-1189

[7] Field dependence of impact ionization coefficients in In0.53Ga0.47As [J].

Ng, JS ;

Tan, CH ;

David, JPR ;

Hill, G ;

Rees, GJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (04) :901-905

[8]

NG JS, 2003, THESIS U SHEFFIELD

[9] Why small avalanche photodiodes are beautiful [J].

Rees, GJ ;

David, JPR .

QUANTUM SENSING: EVOLUTION AND REVOLUTION FROM PAST TO FUTURE, 2003, 4999 :349-362

[10] ANOMALOUS ELECTRIC-FIELD AND TEMPERATURE-DEPENDENCE OF COLLECTOR MULTIPLICATION IN INP/GA0.47IN0.53AS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

RITTER, D ;

HAMM, RA ;

FEYGENSON, A ;

PANISH, MB .

APPLIED PHYSICS LETTERS, 1992, 60 (25) :3150-3152

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