An Ultraviolet Radiation Sensor Using Differential Spectral Response of Silicon Photodiodes

被引：0

作者：

da Silva, Yhang Ricardo Sipauba Carvalho ^{[1
]}

Koda, Yasumasa ^{[1
]}

Nasuno, Satoshi ^{[1
]}

Kuroda, Rihito ^{[1
]}

Sugawa, Shigetoshi ^{[1
]}

机构：

[1] Tohoku Univ, Grad Sch Engn, Aoba Ku, 6-6-11-811 Aza Aoba, Sendai, Miyagi, Japan

来源：

2015 IEEE SENSORS | 2015年

关键词：

ultraviolet light; differential spectral response; silicon; photodiode;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An ultraviolet (UV) sensor is demonstrated with high sensitivity in the UV waveband and low sensitivity in the visible (VIS) and near-infrared (NIR) wavebands, utilizing only bulk silicon technology. The developed sensor utilizes the differential spectral response of photodiodes (PDs) with a high UV sensitivity (PD1) and a low UV sensitivity (PD2), for UV signal extraction under a VIS and NIR light background. To suppress the effects of incident light spatial strength distribution over the sensor, PD1 and PD2 were arranged in a checkered pattern of 8x6 PDs. High Signal to Noise Ratio (SNR) for UV signal extraction was achieved by a developed prototype UV sensor circuit consisted of charge amplifiers connected to PDs and a differential amplifier. The fabricated PD chip has a total area of 1.2 mm(2), PD1 and PD2 showed a sensitivity of 0.16 A/W and 0.02 A/W at 310 nm, respectively. The spectral response of the UV sensor was measured and the UV waveband selective sensitivity was successfully obtained.

引用

页码：1847 / 1850

页数：4

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