Numerical study on improved mixing in silicon melts by double-frequency TMF

被引：26

作者：

Dropka, N. ^{[1
]}

Miller, W. ^{[1
]}

Rehse, U. ^{[1
]}

Rudolph, P. ^{[1
]}

Buellesfeld, F. ^{[2
]}

Sahr, U. ^{[3
]}

Klein, O. ^{[4
]}

Reinhardt, D. ^{[4
]}

机构：

[1] Leibniz Inst Crystal Growth Berlin, D-12489 Berlin, Germany

[2] Schott AG, D-55122 Mainz, Germany

[3] Schott Solar Wafer GmbH, D-07745 Jena, Germany

[4] Weierstrass Inst Appl Anal & Stochast, D-10117 Berlin, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 318卷 / 01期

关键词：

Computer simulation; Fluid flows; Magnetic fields; Solidification; Semiconducting silicon; TRAVELING MAGNETIC-FIELDS;

D O I：

10.1016/j.jcrysgro.2010.10.094

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

During unidirectional solidification of multicrystalline (mc) silicon, the adjustment of controllable mixing patterns with high stirring efficiency can be obtained by application of a double-frequency travelling magnetic field (TMF). It is assumed that such Lorentz force mode is generated within KRISTMAG (R) R heater magnet modules (HMM) positioned around a rectangular crystallization container with silicon melt. The induced flow distributions were studied numerically by 3D magnetic and transient flow calculations. The electromagnetic interference due to the presence of two frequencies and its effect on the resulting Lorentz force density have been estimated analytically. The results show that the flow can be intentionally intensified in the bulk volume without generation of hazardous high velocities in the peripheral region, i.e. near container walls. No considerable resonance effect has been found. As a result the TMF penetration and, hence, the melt mixing level within the central region is enhanced. Additionally, a general improvement of the process purity can be predicted. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：275 / 279

页数：5

共 6 条

[1]

BULLESFELD F, Patent No. 102008059521

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