InP-based membrane photodetectors for optical interconnects to Si

被引：0

作者：

Binetti, P. R. A. ^{[1
]}

Leijtens, X. J. M. ^{[1
]}

Nikoufard, M. ^{[1
]}

de Vries, T. ^{[1
]}

Oei, Y. S. ^{[1
]}

Di Cioccio, L. ^{[2
]}

Fedeli, J. -M. ^{[2
]}

Lagahe, C. ^{[3
]}

Orobtchouk, R. ^{[4
]}

Seassal, C. ^{[4
]}

Van Campenhout, J. ^{[5
]}

Van Thourhout, D. ^{[5
]}

van Veldhoven, P. J. ^{[1
]}

Noetze, R. ^{[1
]}

Smit, M. K. ^{[1
]}

机构：

[1] Tech Univ Eindhoven, COBRA Res Inst, Postbus 513, NL-5600 MB Eindhoven, Netherlands

[2] CEA LETI, F-38054 Grenoble, France

[3] TRACIT Technol, F-38054 Grenoble, France

[4] Univ Lyon 1, Inst Nanotechnol Lyon, CNRS, INL UMR5270, Lyon, France

[5] Univ Ghent, IMEC, INTEC, B-9000 Ghent, Belgium

来源：

2007 4TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS | 2007年

关键词：

optical interconnects; InGaAs/InP; photodetector; PICMOS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the design, fabrication and acharacterization of an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. Waveguide losses in the Si-wiring circuit are below 5 dB/cm. Measured detector responsivity is 0.45 A/W. The photonic device fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing.

引用

页码：34 / +

页数：2

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