InP-based membrane photodetectors for optical interconnects to Si

被引：0

作者：

Binetti, P. R. A. ^{[1
]}

Leijtens, X. J. M. ^{[1
]}

Nikoufard, M. ^{[1
]}

de Vries, T. ^{[1
]}

Oei, Y. S. ^{[1
]}

Di Cioccio, L. ^{[2
]}

Fedeli, J. -M. ^{[2
]}

Lagahe, C. ^{[3
]}

Orobtchouk, R. ^{[4
]}

Seassal, C. ^{[4
]}

Van Campenhout, J. ^{[5
]}

Van Thourhout, D. ^{[5
]}

van Veldhoven, P. J. ^{[1
]}

Noetze, R. ^{[1
]}

Smit, M. K. ^{[1
]}

机构：

[1] Tech Univ Eindhoven, COBRA Res Inst, Postbus 513, NL-5600 MB Eindhoven, Netherlands

[2] CEA LETI, F-38054 Grenoble, France

[3] TRACIT Technol, F-38054 Grenoble, France

[4] Univ Lyon 1, Inst Nanotechnol Lyon, CNRS, INL UMR5270, Lyon, France

[5] Univ Ghent, IMEC, INTEC, B-9000 Ghent, Belgium

来源：

2007 4TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS | 2007年

关键词：

optical interconnects; InGaAs/InP; photodetector; PICMOS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the design, fabrication and acharacterization of an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. Waveguide losses in the Si-wiring circuit are below 5 dB/cm. Measured detector responsivity is 0.45 A/W. The photonic device fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing.

引用

页码：34 / +

页数：2

共 50 条

[21] Quantum efficiency optimization of Inp-based In0.53Ga0.47 as photodetectors
Tian Zhao-Bing
Gu Yi
Zhang Yong-Gang
JOURNAL OF INFRARED AND MILLIMETER WAVES, 2008, 27 (02) : 81 - 85
[22] InP-Based Broadband Photodetectors With InGaAs/GaAsSb Type-II Superlattice
Wang, Jingyi
Xie, Zhiyang
Zhu, Liqi
Zou, Xinbo
Zhao, Xuyi
Yu, Wenfu
Liu, Ruotao
Du, Antian
Gong, Qian
Chen, Baile
IEEE ELECTRON DEVICE LETTERS, 2022, 43 (05) : 757 - 760
[23] High-performance InP-based optical modulators
Yamanaka, Takayuki
Tsnzuki, Ken
Kikuchi, Nobuhiro
Yamada, Eiichi
Shibata, Yasuo
Fukano, Hideki
Nakajima, Hiroki
Akage, Yuichi
Yasaka, Hiroshi
2006 OPTICAL FIBER COMMUNICATION CONFERENCE/NATIONAL FIBER OPTIC ENGINEERS CONFERENCE, VOLS 1-6, 2006, : 434 - 436
[24] Optical study of interdiffusion in strained InP-based heterostructures
Hamoudi, Ali
Ougazzaden, Abdallah
Krauz, Philippe
Rao, Krishna
Juhel, Marc
Thibierge, Huguette
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1995, 34 (01): : 36 - 41
[25] Research and progress of InP-based OEIC optical receiver
Xie, Sheng
Hou, Yu-Wen
Chen, Chao
Mao, Lu-Hong
Bandaoti Guangdian/Semiconductor Optoelectronics, 2008, 29 (03): : 319 - 323
[26] InP-Based Integrated Optical Devices - Present and Future
Shoji, Hajime
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS), 2016,
[27] Investigation of an InP-based image converter with optical excitation
Song, Y.
Cao, L.
Peng, B. D.
Song, G. Z.
Yue, Z. Q.
Ma, J. M.
Sheng, L.
Li, B. K.
Wang, H. X.
REVIEW OF SCIENTIFIC INSTRUMENTS, 2017, 88 (03):
[28] AN OPTICAL STUDY OF INTERDIFFUSION IN STRAINED INP-BASED HETEROSTRUCTURES
HAMOUDI, A
OUGAZZADEN, A
KRAUZ, P
RAO, K
JUHEL, M
THIBIERGE, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (01): : 36 - 41
[29] New optical probes using InP-based cantilevers
Castagne, M
Belier, B
Gall, P
Benfedda, M
Seassal, C
Spisser, A
Leclerc, JL
Viktorovich, P
ULTRAMICROSCOPY, 1998, 71 (1-4) : 81 - 84
[30] Monolithically Integrated InP-based Optical Pulse Shaper
Tahvili, M. S.
Latkowski, S.
Leijtens, X. J. M.
Wale, M. J.
Landais, P.
Smit, M. K.
Bente, E. A. J. M.
2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS EUROPE AND INTERNATIONAL QUANTUM ELECTRONICS CONFERENCE (CLEO EUROPE/IQEC), 2013,

← 1 2 3 4 5 →