Dynamic characteristics of dislocations in highly boron-doped silicon

被引：23

作者：

Yonenaga, I ^{[1
]}

Taishi, T

Huang, X

Hoshikawa, K

机构：

[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[2] Shinshu Univ, Fac Educ, Nagano 3808544, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 89卷 / 10期

关键词：

D O I：

10.1063/1.1367407

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dynamic behavior of dislocations in highly boron (B)-doped Si crystals with concentration up to 2.5x10(20) cm(-3) is investigated using the etch pit technique. Suppression of the generation of dislocations from a surface scratch is found for B-doped Si and the critical stress for dislocation generation increases with B concentration, which is interpreted in terms of dislocation locking due to impurity segregation. The velocity of dislocations in B-doped crystals is revealed to increase by increasing the B concentration. (C) 2001 American Institute of Physics.

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页码：5788 / 5790

页数：3

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