Two-Dimensional WSe2/MoS2 p-n Heterojunction-Based Transparent Photovoltaic Cell and Its Performance Enhancement by Fluoropolymer Passivation

被引:54
作者
Cho, Ah-Jin [1 ,2 ]
Song, Min-Kyu [1 ,2 ]
Kang, Dong-Won [3 ]
Kwon, Jang-Yeon [1 ,2 ]
机构
[1] Yonsei Univ, Sch Integrated Technol, Incheon 21983, South Korea
[2] Yonsei Inst Convergence Technol, Incheon 21983, South Korea
[3] Chung Ang Univ, Sch Energy Syst Engn, Seoul 06974, South Korea
基金
新加坡国家研究基金会;
关键词
transparent solar cell; 2D material; van der Waals heterojunction; WSe2; MoS2; fluoropolymer; PHOTOCURRENT GENERATION;
D O I
10.1021/acsami.8b12250
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
As a means to overcome the limitation of installation space and to promote the utilization of the solar cell in various applications, a transparent thin-film solar cell has been studied by many researchers. To achieve a transparent solar cell, the choice of materials which are transparent enough and showing the photovoltaic property at the same time is the key. Here, we suggest a two-dimensional (2D) p-n heterojunction of WSe2/MoS2 and an indium tin oxide electrode to fabricate a transparent thin-film photovoltaic cell. Because of advantages that 2D materials possess, a highly transparent (similar to 80%) solar cell with considerable efficiency was achieved. Furthermore, by introducing a transparent passivation layer composed of a fluoropolymer, the photovoltaic performance was much improved. With the passivation layer, our WSe2/MoS2 transparent photovoltaic cell reached an efficiency of similar to 10%. A comparison of photovoltaic parameters before and after applying passivation and analysis on the origin of such differences are also discussed. To the best of our knowledge, this is the first report to fabricate a 2D material based fully transparent photovoltaic device. Our result exhibits a great potential of the van der Waals p-n heterojunction of 2D semiconductors to be utilized for an active layer of a highly transparent and lightweight thin-film solar cell.
引用
收藏
页码:35972 / 35977
页数:6
相关论文
共 30 条
[1]   Transition metal dichalcogenide heterojunction PN diode toward ultimate photovoltaic benefits [J].
Ahn, Jongtae ;
Jeon, Pyo Jin ;
Raza, Syed Raza Ali ;
Pezeshki, Atiye ;
Min, Sung-Wook ;
Hwang, Do Kyung ;
Im, Seongil .
2D MATERIALS, 2016, 3 (04)
[2]   Near-unity photoluminescence quantum yield in MoS2 [J].
Amani, Matin ;
Lien, Der-Hsien ;
Kiriya, Daisuke ;
Xiao, Jun ;
Azcatl, Angelica ;
Noh, Jiyoung ;
Madhvapathy, Surabhi R. ;
Addou, Rafik ;
Santosh, K. C. ;
Dubey, Madan ;
Cho, Kyeongjae ;
Wallace, Robert M. ;
Lee, Si-Chen ;
He, Jr-Hau ;
Ager, Joel W., III ;
Zhang, Xiang ;
Yablonovitch, Eli ;
Javey, Ali .
SCIENCE, 2015, 350 (6264) :1065-1068
[3]   Extraordinary Sunlight Absorption and One Nanometer Thick Photovoltaics Using Two-Dimensional Monolayer Materials [J].
Bernardi, Marco ;
Palummo, Maurizia ;
Grossman, Jeffrey C. .
NANO LETTERS, 2013, 13 (08) :3664-3670
[4]   Electroluminescence and Photocurrent Generation from Atomically Sharp WSe2/MoS2 Heterojunction p-n Diodes [J].
Cheng, Rui ;
Li, Dehui ;
Zhou, Hailong ;
Wang, Chen ;
Yin, Anxiang ;
Jiang, Shan ;
Liu, Yuan ;
Chen, Yu ;
Huang, Yu ;
Duan, Xiangfeng .
NANO LETTERS, 2014, 14 (10) :5590-5597
[5]   A high-performance complementary inverter based on transition metal dichalcogenide field-effect transistors [J].
Cho, Ah-Jin ;
Park, Kee Chan ;
Kwon, Jang-Yeon .
NANOSCALE RESEARCH LETTERS, 2015, 10
[6]   High Performance Multilayer MoS2 Transistors with Scandium Contacts [J].
Das, Saptarshi ;
Chen, Hong-Yan ;
Penumatcha, Ashish Verma ;
Appenzeller, Joerg .
NANO LETTERS, 2013, 13 (01) :100-105
[7]   Thirty Years of Luminescent Solar Concentrator Research: Solar Energy for the Built Environment [J].
Debije, Michael G. ;
Verbunt, Paul P. C. .
ADVANCED ENERGY MATERIALS, 2012, 2 (01) :12-35
[8]  
Fang H, 2012, NANO LETT, V12, P3788, DOI [10.1021/nl301702r, 10.1021/nl3040674]
[9]   Photovoltaic Effect in an Electrically Tunable van der Waals Heterojunction [J].
Furchi, Marco M. ;
Pospischil, Andreas ;
Libisch, Florian ;
Burgdoerfer, Joachim ;
Mueller, Thomas .
NANO LETTERS, 2014, 14 (08) :4785-4791
[10]   The Restorative Effect of Fluoropolymer Coating on Electrical Characteristics of Graphene Field-Effect Transistors [J].
Ha, Tae-Jun ;
Lee, Jongho ;
Akinwande, Deji ;
Dodabalapur, Ananth .
IEEE ELECTRON DEVICE LETTERS, 2013, 34 (04) :559-561