On the sensitivity to temperature of the threshold current in a strained quantum-well semiconductor laser under a magnetic field

被引：0

作者：

Grado-Caffaro, M. A.

Grado-Caffaro, M.

机构：

[1] 28029 Madrid, C/Julio Palacios 11

来源：

OPTIK | 2011年 / 122卷 / 07期

关键词：

Strained quantum-well laser; Sensitivity; Temperature; Magnetic field;

D O I：

10.1016/j.ijleo.2010.03.022

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The sensitivity to temperature of the threshold current in a strained quantum-well semiconductor laser under a perpendicular magnetic field is determined quantitatively by means of a suitable merit parameter. The values taken on by this parameter are discussed in terms of changes in the temperature and in the magnetic-field strength. (C) 2010 Elsevier GmbH. All rights reserved.

引用

页码：561 / 562

页数：2

共 5 条

[1]

Cruz J.B., 1972, Feedback Systems

[2] On the voltage sensitivity of current in electronic transport [J].