Metal-insulator transition in zirconium oxynitride films

被引：6

作者：

Wu, Jiankun ^{[1
,2
]}

Li, Zhaoguo ^{[1
]}

Peng, Liping ^{[1
]}

Yi, Yong ^{[2
]}

Zhang, Jicheng ^{[1
]}

机构：

[1] China Acad Engn Phys, Res Ctr Laser Fus, Mianyang 621900, Sichuan, Peoples R China

[2] Southwest Univ Sci & Technol, Sch Mat Sci & Engn, Mianyang 621000, Sichuan, Peoples R China

来源：

PHYSICA B-CONDENSED MATTER | 2022年 / 624卷

关键词：

Zirconium oxynitride film; Metal-insulator transition; Electrical transport; Electron-phonon interaction; Variable-range hopping; MECHANICAL-PROPERTIES; TEMPERATURE; ZRN; TIN; RESISTIVITY; RESISTANCE; COATINGS;

D O I：

10.1016/j.physb.2021.413428

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The zirconium oxynitride (ZrNxOy) thin films were deposited on the SiO2/Si substrate via direct current reactive magnetron sputtering, by tuning the reactive gas ratio r (the volume ratio between 1% O2+99% N2 and Ar) from 5.0% to 20.0%. The temperature dependence of resistivity reveals that the ZrNxOy films for r 10.0% show the metallic transport behaviors, and the remarkable semiconductor transport features are presented while r 15.0%. The metal-insulator transition is thus observed in the ZrNxOy films by tuning r. This result provides insight into the design and control of the electrical properties in ZrNxOy-based devices.

引用

页数：6

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