Metal-insulator transition in zirconium oxynitride films

被引：6
作者：
Wu, Jiankun [1 ,2 ]
Li, Zhaoguo [1 ]
Peng, Liping [1 ]
Yi, Yong [2 ]
Zhang, Jicheng [1 ]
机构：
[1] China Acad Engn Phys, Res Ctr Laser Fus, Mianyang 621900, Sichuan, Peoples R China
[2] Southwest Univ Sci & Technol, Sch Mat Sci & Engn, Mianyang 621000, Sichuan, Peoples R China
来源：
PHYSICA B-CONDENSED MATTER | 2022年 / 624卷
关键词：
Zirconium oxynitride film; Metal-insulator transition; Electrical transport; Electron-phonon interaction; Variable-range hopping; MECHANICAL-PROPERTIES; TEMPERATURE; ZRN; TIN; RESISTIVITY; RESISTANCE; COATINGS;
D O I：
10.1016/j.physb.2021.413428
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The zirconium oxynitride (ZrNxOy) thin films were deposited on the SiO2/Si substrate via direct current reactive magnetron sputtering, by tuning the reactive gas ratio r (the volume ratio between 1% O2+99% N2 and Ar) from 5.0% to 20.0%. The temperature dependence of resistivity reveals that the ZrNxOy films for r 10.0% show the metallic transport behaviors, and the remarkable semiconductor transport features are presented while r 15.0%. The metal-insulator transition is thus observed in the ZrNxOy films by tuning r. This result provides insight into the design and control of the electrical properties in ZrNxOy-based devices.
引用
收藏
页数：6
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