Metal-insulator transition in zirconium oxynitride films

被引：6

作者：

Wu, Jiankun ^{[1
,2
]}

Li, Zhaoguo ^{[1
]}

Peng, Liping ^{[1
]}

Yi, Yong ^{[2
]}

Zhang, Jicheng ^{[1
]}

机构：

[1] China Acad Engn Phys, Res Ctr Laser Fus, Mianyang 621900, Sichuan, Peoples R China

[2] Southwest Univ Sci & Technol, Sch Mat Sci & Engn, Mianyang 621000, Sichuan, Peoples R China

来源：

PHYSICA B-CONDENSED MATTER | 2022年 / 624卷

关键词：

Zirconium oxynitride film; Metal-insulator transition; Electrical transport; Electron-phonon interaction; Variable-range hopping; MECHANICAL-PROPERTIES; TEMPERATURE; ZRN; TIN; RESISTIVITY; RESISTANCE; COATINGS;

D O I：

10.1016/j.physb.2021.413428

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The zirconium oxynitride (ZrNxOy) thin films were deposited on the SiO2/Si substrate via direct current reactive magnetron sputtering, by tuning the reactive gas ratio r (the volume ratio between 1% O2+99% N2 and Ar) from 5.0% to 20.0%. The temperature dependence of resistivity reveals that the ZrNxOy films for r 10.0% show the metallic transport behaviors, and the remarkable semiconductor transport features are presented while r 15.0%. The metal-insulator transition is thus observed in the ZrNxOy films by tuning r. This result provides insight into the design and control of the electrical properties in ZrNxOy-based devices.

引用

页数：6

共 50 条

[1] Asymmetric Metal-Insulator Transition in Disordered Ferromagnetic Films
Misra, R.
Hebard, A. F.
Muttalib, K. A.
Woelfle, P.
PHYSICAL REVIEW LETTERS, 2011, 107 (03)
[2] Unusual metal-insulator transition in disordered ferromagnetic films
Muttalib, K. A.
Woelfle, P.
Misra, R.
Hebard, A. F.
PHYSICA B-CONDENSED MATTER, 2012, 407 (20) : 4023 - 4026
[3] Metal-insulator transition in oxygen deficient Ti based oxide films
Nistor, Magdalena
Perriere, Jacques
SOLID STATE COMMUNICATIONS, 2013, 163 : 60 - 64
[4] Metal-insulator transition in MnS
Chernov, Evgenii D.
Lukoyanov, Alexey, V
PHYSICA SCRIPTA, 2025, 100 (03)
[5] Heterogeneous nucleation and metal-insulator transition in epitaxial films of NdNiO3
Kumar, Devendra
Rajeev, K. P.
Kushwaha, A. K.
Budhani, R. C.
JOURNAL OF APPLIED PHYSICS, 2010, 108 (06)
[6] The metal-insulator transition: A perspective
Edwards, PP
Johnston, RL
Rao, CNR
Tunstall, DP
Hensel, F
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1998, 356 (1735): : 5 - 22
[7] Metal-insulator transition induced in CaVO3 thin films
Gu, M. (mg8yd@virginia.edu), 1600, American Institute of Physics Inc. (113):
[8] Fine structure of metal-insulator transition in EuO resolved by doping engineering
Averyanov, Dmitry V.
Parfenov, Oleg E.
Tokmachev, Andrey M.
Karateev, Igor A.
Kondratev, Oleg A.
Taldenkov, Alexander N.
Platunov, Mikhail S.
Wilhelm, Fabrice
Rogalev, Andrei
Storchak, Vyacheslav G.
NANOTECHNOLOGY, 2018, 29 (19)
[9] Optical investigation of the metal-insulator transition in the manganite films with the thickness dependence
Seo, Il Wan
Lee, Y. S.
Seo, Ji Won
Baek, Seung-Hyub
CURRENT APPLIED PHYSICS, 2019, 19 (09) : 1019 - 1023
[10] On the metal-insulator transition in vanadium dioxide
Fujita, Shigeji
Jovaini, Azita
Godoy, Salvador
Suzuki, Akira
PHYSICS LETTERS A, 2012, 376 (44) : 2808 - 2811

← 1 2 3 4 5 →