A 25 GHz Wide-tuning VCO RFIC Implemented in 0.13 um SiGe BiCMOS Technology

被引：2

作者：

Kakani, Vasanth ^{[1
]}

Jin, Yuehai ^{[1
]}

Dai, Fa Foster ^{[1
]}

机构：

[1] Auburn Univ, Dept Elect & Comp Engn, Auburn, AL 36849 USA

来源：

2010 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM) | 2010年

关键词：

SiGe; HBT; BiCMOS; voltage controlled oscillator (VCO); phase noise;

D O I：

10.1109/BIPOL.2010.5668026

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the design and measurement of an integrated millimeter wave wideband voltage controlled oscillator (VCO). This VCO employs the on-chip transmission lines and hyperabrupt junction varactors to form high Q resonator. The VCO RFIC was implemented in a 0.13um 200GHz ft SiGe hetero-junction bipolar transistor (HBT) BiCMOS technology. The VCO oscillation frequency is around 25GHz, targeting at the ultra wideband (UWB) and short range radar applications. The VCO phase noise was measured around -82.5dVc/Hz at 500 KHz frequency offset. It has a wide tuning range from 23.8GHz to 26.3GHz. The core of VCO circuit consumes 10mA current from a 2.2V power supply and occupies 0.56x0.205mm(2) area.

引用

页码：5 / 8

页数：4

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