Dielectric properties of soft chemical method derived CaCu3Ti4O12 thin films onto Pt/TiO2/Si(100) substrates

被引：24

作者：

Moura, F. ^{[2
]}

Aguiar, E. C. ^{[3
]}

Longo, E. ^{[3
]}

Varela, J. A. ^{[3
]}

Simoes, A. Z. ^{[1
]}

机构：

[1] Univ Estadual Paulista Unesp, Fac Engn Guaratingueta, BR-12516410 Sao Paulo, Brazil

[2] Univ Fed Itajuba Unifei, BR-3590037 Itabira, MG, Brazil

[3] Univ Estadual Paulista, Inst Quim, Lab Interdisciplinar Ceram, BR-14801907 Sao Paulo, Brazil

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2011年 / 509卷 / 09期

基金：

巴西圣保罗研究基金会;

关键词：

Thin films; Dielectrics; Chemical synthesis; X-ray diffraction; ELECTRICAL-PROPERTIES; CONSTANT MATERIAL; BEHAVIOR; DEPOSITION; IONS; CU;

D O I：

10.1016/j.jallcom.2010.12.184

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Calcium copper titanate, CaCu3Ti4O12 (CCTO), thin film has been deposited by the soft chemical method on Pt/Ti/SiO2/Si (1 0 0) substrates at 700 degrees C for 2 h. The peaks were indexed as cubic phase belonging to the Im-3 space group. The film exhibited a duplex microstructure consisting of large grains of 130 nm in length and regions of fine grains (less than 80 nm). The CCTO film capacitor showed a dielectric loss of 0.031 and a dielectric permittivity of 1020 at 1 MHz. The J-V behavior is completely symmetrical, regardless of whether the conduction is limited by interfacial barriers or by bulk-like mechanisms. Based on impedance analyses, the equivalent circuit of CCTO film consisting of a resistor connected in series with two resistor-capacitor (RC) elements. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：3817 / 3821

页数：5

共 43 条

[1] Enhanced dielectric response of GeO2-doped CaCu3Ti4O12 ceramics
Amaral, F.
Rubinger, C. P. L.
Valente, M. A.
Costa, L. C.
Moreira, R. L.
[J]. JOURNAL OF APPLIED PHYSICS, 2009, 105 (03)
[2] BERMUDEZ JA, 2004, THESIS U PUERTO RICO
[3] Grain size effects on the dielectric constant of CaCu3Ti4O12 ceramics
Brizé, V
Gruener, G
Wolfman, J
Fatyeyeva, K
Tabellout, M
Gervais, M
Gervais, F
[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2006, 129 (1-3): : 135 - 138
[4] Strong nonlinear current-voltage behaviour in perovskite-derivative calcium copper titanate
Chung, SY
Kim, ID
Kang, SJL
[J]. NATURE MATERIALS, 2004, 3 (11) : 774 - 778
[5] Highly oriented ferroelectric CaBi2Nb2O9 thin films deposited on Si(100) by pulsed laser deposition
Desu, SB
Cho, HS
Joshi, PC
[J]. APPLIED PHYSICS LETTERS, 1997, 70 (11) : 1393 - 1395
[6] Analysis of electrical properties of post-annealed polycrystalline CaCu3Ti4O12 films by impedance spectroscopy
Department of Physics, Jiangsu Key Laboratory of Thin Films, Suzhou University, Suzhou 215006, China
不详
[J]. Chin. Phys. Lett., 2006, 4 (990-993): : 990 - 993
[7] Microstructure and dielectric properties of pulsed-laser-deposited CaCu3Ti4O12 thin films on LaNiO3 buffered Pt/Ti/SiO2/Si substrates
Fang, L
Shen, M
Yao, D
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 80 (08): : 1763 - 1767
[8] Effects of postanneal conditions on the dielectric properties of CaCu3Ti4O12 thin films prepared on Pt/Ti/SiO2/Si substrates
Fang, L
Shen, MR
Cao, WW
[J]. JOURNAL OF APPLIED PHYSICS, 2004, 95 (11) : 6483 - 6485
[9] Deposition and dielectric properties of CaCu3Ti4O12 thin films on Pt/Ti/SiO2/Si substrates using pulsed-laser deposition
Fang, L
Shen, MR
[J]. THIN SOLID FILMS, 2003, 440 (1-2) : 60 - 65
[10] First-principles study of the structure and lattice dielectric response of CaCu3Ti4O12 -: art. no. 214112
He, LX
Neaton, JB
Cohen, MH
Vanderbilt, D
Homes, CC
[J]. PHYSICAL REVIEW B, 2002, 65 (21) : 2141121 - 21411211

← 1 2 3 4 5 →