Experimental study on carrier transport mechanism in ultrathin-body SOI MOSFETs

被引：0

作者：

Uchida, K ^{[1
]}

Watanabe, H ^{[1
]}

Koga, J ^{[1
]}

Kinoshita, A ^{[1
]}

Takagi, S ^{[1
]}

机构：

[1] Toshiba Co Ltd, Adv LSI Technol Lab, Isogo Ku, Yokohama, Kanagawa 2358522, Japan

来源：

2003 IEEE INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES | 2003年

关键词：

ultrathin-body; SOI; MOSFET; mobility; quantum-mechanical confinement;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electrical characteristics of ultrathin-body SOI CMOSFETs are intensively investigated. It is demonstrated that electron mobility increases as SOI thickness decreases, when SOI thickness, T-SOI, is in the range from 3.5 nm to 4.5 nm. On the other hand, hole mobility decreases monotonically as T-SOI, decreases. In addition, it is demonstrated that, when SOI thickness is thinner than 4 urn, slight (even atomic-level) SOI thickness fluctuations have a significant impact on threshold voltage, gate-channel capacitance, and carrier mobility of ultrathin-body CMOSFETs.

引用

页码：8 / 13

页数：6

共 27 条

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