Is There an Intrinsic Limit to the Charge-Carrier-Induced Increase of the Curie Temperature of EuO?

被引：56

作者：

Mairoser, T. ^{[1
]}

Schmehl, A. ^{[1
]}

Melville, A. ^{[2
]}

Heeg, T. ^{[2
]}

Canella, L. ^{[3
]}

Boeni, P. ^{[4
]}

Zander, W. ^{[5
,6
]}

Schubert, J. ^{[5
,6
]}

Shai, D. E. ^{[7
]}

Monkman, E. J. ^{[7
]}

Shen, K. M. ^{[7
]}

Schlom, D. G. ^{[2
]}

Mannhart, J. ^{[1
]}

机构：

[1] Univ Augsburg, Zentrum Elekt Korrelat & Magnetismus, D-86159 Augsburg, Germany

[2] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

[3] Tech Univ Munich, Inst Radiochem, D-85748 Garching, Germany

[4] Tech Univ Munich, Phys Dept E21, D-85748 Garching, Germany

[5] Forschungszentrum Julich GmbH, IBN IT 1, D-52425 Julich, Germany

[6] Forschungszentrum Julich GmbH, JARAFIT, D-52425 Julich, Germany

[7] Cornell Univ, Dept Phys, Ithaca, NY 14853 USA

来源：

PHYSICAL REVIEW LETTERS | 2010年 / 105卷 / 25期

关键词：

FERROMAGNETIC SEMICONDUCTOR EUO; DOPED EUO; EUROPIUM CHALCOGENIDES; FILMS; STOICHIOMETRY; CONDUCTIVITY; EXCHANGE; OXIDE;

D O I：

10.1103/PhysRevLett.105.257206

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Rare earth doping is the key strategy to increase the Curie temperature (T-C) of the ferromagnetic semiconductor EuO. The interplay between doping and charge carrier density (n), and the limit of the T-C increase, however, are yet to be understood. We report measurements of n and T-C of Gd-doped EuO over a wide range of doping levels. The results show a direct correlation between n and T-C, with both exhibiting a maximum at high doping. On average, less than 35% of the dopants act as donors, raising the question about the limit to increasing T-C.

引用

页数：4

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