Structural and compositional investigation of yttrium-doped HfO2 films epitaxially grown on Si(111)

被引:19
作者
Yang, Z. K.
Lee, W. C.
Lee, Y. J.
Chang, P.
Huang, M. L.
Hong, M.
Yu, K. L.
Tang, M. -T.
Lin, B. -H.
Hsu, C. -H. [1 ]
Kwo, J.
机构
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30313, Taiwan
[2] Natl Synchrotron Rad Res Ctr, Res Div, Hsinchu 30076, Taiwan
[3] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan
关键词
D O I
10.1063/1.2816121
中图分类号
O59 [应用物理学];
学科分类号
摘要
Cubic phase yttrium-doped HfO2 (YDH) ultrathin films were grown on Si(111) substrates by molecular beam epitaxy. Thorough structural and morphological investigations by x-ray scattering and transmission electron microscopy reveal that the YDH thin films are epitaxially grown on the Si substrates with (111)(YDH)parallel to (111)(Si) and [10 (1) over bar] YDH parallel to [1 (1) over bar0](Si). The interface between YDH and Si is atomistic sharp and free of interfacial layer. We have also determined the yttrium content of YDH films to be 19% by using anomalous x-ray diffraction (AXD) across Y k edge and angle resolved x-ray photoelectron spectroscopy (AR-XPS). The agreement between the AXD and AR-XPS results manifests that the incorporated Y atoms homogeneously substitute Hf atoms in the crystalline lattice and form a substitutional solid solution. (c) 2007 American Institute of Physics.
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页数:3
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