A 18-dBm G-Band Power Amplifier using 130-nm SiGe BiCMOS Technology

被引：0

作者：

Ali, Abdul ^{[1
,2
]}

Colantonio, Paolo ^{[1
]}

Giannini, Franco ^{[1
]}

Kissinger, Dietmar ^{[3
]}

Ng, Herman Jalli ^{[2
]}

Yun, Jongwon ^{[2
,4
]}

机构：

[1] Univ Roma Tor Vergata, Dept Elect Engn, I-00133 Rome, Italy

[2] IHP Leibniz Inst Innovat Mikroelekt, D-15236 Frankfurt, Oder, Germany

[3] Ulm Univ, Inst Electron Devices & Circuits, D-89081 Ulm, Germany

[4] Samsung Elect, Gyeonggi 18448, South Korea

来源：

2019 14TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2019) | 2019年

基金：

欧盟地平线“2020”;

关键词：

Cascode; SiGe BiCMOS; power amplifier; four-way combiner; G-band PA; TRANSMITTER; RECEIVER;

D O I：

10.23919/eumic.2019.8909410

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a four-way combined G-band power amplifier (PA) using a 130-nm SiGe BiCMOS technology. A 185-GHz three-stage single-ended PA based on cascode topology with two driver stages and a power stage is designed. To combine output power of four single-ended PAs, a low-loss four-way reactive power combiner is designed. The developed PA shows a saturated output power of 18.1 dBm with peak gain of 25.9 dB and PAE of 3.5 % at 185 GHz. In addition, the PA provides a 3 dB and 6 dB bandwidth of 27 GHz and 42 GHz, respectively. To the best of our knowledge, the measured power reported in this paper is the highest for SiGe BiCMOS PAs in G-band.

引用

页码：164 / 167

页数：4

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