InAs quantum dots in GaAs - Technology and luminescence properties

被引：0
|
作者：
Hulicius, E [1 ]
Oswald, J [1 ]
Pangrac, J [1 ]
Melichar, K [1 ]
Simecek, T [1 ]
Janda, P [1 ]
机构：
[1] Acad Sci Czech Republ, Inst Phys, CR-16253 Prague 6, Czech Republic
来源：
HETEROSTRUCTURE EPITAXY AND DEVICES: HEAD '97 | 1998年 / 48卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：207 / 210
页数：4
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