Generation of Highly n-Type Titanium Oxide Using Plasma Fluorine Insertion

被引：80

作者：

Seo, Hyungtak ^{[1
,2
]}

Baker, L. Robert ^{[1
,2
]}

Hervier, Antoine ^{[1
,2
]}

Kim, Jinwoo ^{[3
]}

Whitten, J. L. ^{[4
]}

Somorjai, Gabor A. ^{[1
,2
]}

机构：

[1] Lawrence Berkeley Natl Lab, Div Chem Sci, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA

[3] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

[4] N Carolina State Univ, Dept Chem, Raleigh, NC 27695 USA

来源：

NANO LETTERS | 2011年 / 11卷 / 02期

关键词：

Titanium oxide; oxide doping; transport; fluorine; surface conduction; DOPED TIO2; METAL; DEFECTS;

D O I：

10.1021/nl1039378

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

True n-type doping of titanium oxide without formation of midgap states would expand the use of metal oxides for charge-based devices. We demonstrate that plasma-assisted. fluorine insertion passivates defect States and that fluorine acts as an n-type donor in titanium oxide. This enabled us to modify the Fermi level and transport properties of titanium oxide outside the hits of O vacancy doping. The origin of the electronic structure modification is explained by ab initio calculation.

引用

页码：751 / 756

页数：6

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