Modelling of Staebler-Wronski effect in hydrogenated amorphous silicon under moderate and intense illumination

被引：2
|
作者：
Meftah, AF [1 ]
Meftah, AM [1 ]
Merazga, A [1 ]
机构：
[1] Univ Mohammed Khider, Fac Sci, Lab Mat Semiconducteurs & Met, Biskra 07000, Algeria
来源：
DEFECTS AND DIFFUSION IN SEMICONDUCTORS - AN ANNUAL RETROSPECTIVE VII - | 2004年 / 230卷
关键词：
a-Si : H; bimolecular recombination; monomolecular recombination; Staebler-Wronski effect;
D O I：
10.4028/www.scientific.net/DDF.230-232.221
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A new model is developed for the Staebler-Wronski effect (SWE) in intrinsic a-Si:H. In this model, non-radiative recombination of the photogenerated carriers occurs at a weak bond close to a SiHHSi configuration, which allows a local creation of defect of the SiHD type. This defect can be annihilated by mobile hydrogen atom that has been emitted from an other distant SiHD defect as a result of non-radiative recombination at this defect site. In this study we have considered illumination intensities in the moderate and intense illumination range. In both cases, the proposed model reproduces many experimental features of the SWE known in the literature.
引用
收藏
页码：221 / 231
页数：11
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