Investigation of performance of semi-insulating GaAs detectors irradiated by high γ doses

被引：0
作者：
Necas, V [1 ]
Anh, TL
Sekácová, K
Darmo, J
Dubecky, F
Perd'ochová, A
机构：
[1] Slovak Univ Technol Bratislava, Fac Elect Engn & Informat Technol, Dept Nucl Phys & Technol, SK-81219 Bratislava, Slovakia
[2] Slovak Univ Technol Bratislava, Fac Civil Engn, Dept Phys, SK-81219 Bratislava, Slovakia
[3] Slovak Acad Sci, Inst Elect Engn, SK-84239 Bratislava, Slovakia
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2001年 / 458卷 / 1-2期
关键词：
GaAs; detector; gamma-ray irradiation; gamma-doses; charge-collection efficiency;
D O I：
暂无
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
We report here the preliminary results on liquid encapsulated Czochralski (LEC) semi-insulating (SI) GaAs detectors after gamma irradiation. The detectors have been irradiated with 1.17 and 1.33 MeV photons from Co-60 With doses up to 19.2 kGy. Total doses correspond to the photon flux by the order of 10(13) gamma /mm(2) incident on the device. The detectors before and after exposure to various radiation doses have been characterised. The I-V characteristics for both polarities and pulse-height spectra versus voltage applied at the temperature of 295 K using 122keV Co-57 gamma -source were measured. A significant increase of charge-collection efficiency after irradiation of detectors was observed. (C) 2001 Elsevier Science B.V. All rights reserved.
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收藏
页码：348 / 351
页数：4
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