Structural and Phase Transformation of AIIIBV(100) Semiconductor Surface in Interaction with Selenium

Surfaces of GaAs(100), InAs(100), and GaP(100) substrates thermally treated in selenium vapor have been investigated by transmission electron microscopy and electron probe X-ray microanalysis. Some specific features and regularities of the formation of A(3)(III)B(4)(VI) (100)c(2 x 2) surface phases and thin layers of gallium or indium selenides A(2)(III)B(3)(VI)(100) on surfaces of different A(III)B(V)(100) semiconductors are discussed within the vacancy model of surface atomic structure.