manganites;
thin films;
magnetic and transport properties;
hall effect;
D O I:
10.1016/j.apsusc.2004.09.154
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
La1-xBaxMnO3 thin films (0.05 <= x <= 0.2) with a tensile strain from substrate exhibit unusual film thickness dependence on the Curie temperature T-C. The T-C was found to increase up to room temperature with decreasing film thickness. In this study, the origin of the T-C enhancement is examined by performing Hall measurements. The carrier densities of various thick films were found to be almost constant value (similar to 6 x 10(20) cm(-3)) at 10 K, whereas Hall mobility drastically increased, from 5 cm(2)/V s for 729-nm thick film to 50 cm(2)/V s for 24-nm thick film. These results indicate that the T-C enhancement is induced by increase of carrier transfer due to lattice deformation of Mn-O-Mn networks. (c) 2004 Elsevier B.V. All rights reserved.
机构:
Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China
Chinese Acad Sci, State Key Lab Funct Mat Informat, Lab Nanotechnol, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R ChinaTongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China
Song, Sannian
Zhai, Jiwei
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Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R ChinaTongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China
Zhai, Jiwei
Gao, Lina
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Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R ChinaTongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China
Gao, Lina
Yao, Xi
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Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R ChinaTongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China