Improved Technique for Quantifying the Bias-Dependent Mobility of Metal-Oxide Thin-Film Transistors

In this paper, we build upon existing techniques to provide a self-consistent, physically based method particularly well suited for quantifying the mobility of solution-processed transition metal-oxide-based thin-film transistors (TFTs). The methodology is presented as a more appropriate alternative to existing square-law techniques whose assumptions are inapplicable to systems exhibiting dispersive transport. To demonstrate its utility in solution-processed electronics, this method was applied to solution-processed SnO2 and ZnO TFTs having various gate dielectrics. In addition, to account for the different operating voltages set by the differences in effective oxide thickness of the dielectric, mobility was evaluated as a function of the transverse electric field, allowing for the direct comparison of mobility independent of the choice of gate dielectric.