Experimental evidence of the hybridization of the electron states of an impurity and the conduction band in the HgSe:Fe system

被引:7
作者
Okulov, VI
Sabirzyanova, LD
Kurmaev, ÉZ
Finkel'shtein, LD
Karimov, RF
Moewes, A
Paranchich, SY
机构
[1] Russian Acad Sci, Inst Met Phys, Ural Div, Ekaterinburg 620219, Russia
[2] Kyoto Univ, Dept Mat Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan
[3] Chernovsty Natl Univ, UA-58012 Chernovtsy, Ukraine
[4] Univ Saskatchewan, Dept Phys & Engn Phys, Saskatoon, SK S7N 5E2, Canada
基金
俄罗斯基础研究基金会;
关键词
D O I
10.1134/1.1887918
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
X-ray absorption spectra from iron donor impurities in mercury selenide have been analyzed in a concentration range where the Fermi energy of conduction electrons is close to the energy of the donor d level. At high impurity concentrations, the resulting spectrum corresponds to the completely filled donor state and coincides with the spectrum of a bivalent iron ion. A transition to an intermediate-filling state is observed with decreasing the concentration. The spectra are quantitatively analyzed in a model implying the existence of a mixture of ions that contain and do not contain a donor electron in a bound state. It has been found that such a model is significantly inconsistent with the experimental data. It has been shown that the concentration dependence of the x-ray spectra corresponds to the manifestation of the significant hybridization of localized and delocalized donor electron states in the conduction band. (c) 2005 Pleiades Publishing, Inc.
引用
收藏
页码:72 / 74
页数:3
相关论文
共 11 条
[1]   X-RAY-ABSORPTION SPECTROSCOPY AT THE FE L(2,3) THRESHOLD IN IRON-OXIDES [J].
CROCOMBETTE, JP ;
POLLAK, M ;
JOLLET, F ;
THROMAT, N ;
GAUTIERSOYER, M .
PHYSICAL REVIEW B, 1995, 52 (05) :3143-3150
[2]  
GLUZMAN NG, 1986, SOV PHYS SEMICOND+, V20, P1251
[3]  
GLUZMAN NG, 1986, SOV PHYS SEMICOND+, V20, P55
[4]   LOCATION OF THE FE2+(3D6) DONOR IN THE BAND-STRUCTURE OF MIXED-CRYSTALS HG1-VCDVSE [J].
MYCIELSKI, A ;
DZWONKOWSKI, P ;
KOWALSKI, B ;
ORLOWSKI, BA ;
DOBROWOLSKA, M ;
ARCISZEWSKA, M ;
DOBROWOLSKI, W ;
BARANOWSKI, JM .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (19) :3605-3613
[6]   Effects of resonance scattering of electrons by donor impurities in semiconductors [J].
Okulov, VI .
LOW TEMPERATURE PHYSICS, 2004, 30 (11) :897-903
[7]   Low-temperature anomalies of the mobility and Shubnikov-de Haas oscillations due to electron resonance scattering on donor impurities in semiconductors. Explanation based on the Friedel approach [J].
Okulov, VI ;
Sabirzyanova, LD ;
Sazonova, KS ;
Paranchich, SY .
LOW TEMPERATURE PHYSICS, 2004, 30 (04) :328-331
[8]   REDUCTION OF CHARGE-CENTER SCATTERING RATE IN HG1-XFEXSE [J].
POOL, FS ;
KOSSUT, J ;
DEBSKA, U ;
REIFENBERGER, R .
PHYSICAL REVIEW B, 1987, 35 (08) :3900-3909
[9]  
TSIDILKOVSKII IM, 1992, USP FIZ NAUK+, V162, P63, DOI 10.1070/PU1992v035n02ABEH002215
[10]  
WILAMOWSKI Z, 1990, ACTA PHYS POL A, V77, P133