Radiation hardness of diamond and silicon sensors compared

被引:72
|
作者
de Boer, Wim
Bol, Johannes
Furgeril, Alex
Mueller, Steffen
Sander, Christian
Berdermann, Eleni
Pomorski, Michal
Huhtinen, Mika
机构
[1] Univ Karlsruhe, D-76128 Karlsruhe, Germany
[2] Gesell Schwerionenforsch mbH, D-64291 Darmstadt, Germany
[3] CERN, CH-1211 Geneva, Switzerland
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2007年 / 204卷 / 09期
关键词
TRACKING DETECTORS; ENERGY;
D O I
10.1002/pssa.200776327
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The radiation hardness of silicon charged particle sensors is compared with single crystal and polycrystalline diamond sensors, both experimentally and theoretically. It is shown that for Si- and C-sensors, the NIEL hypothesis, which states that the signal loss is proportional to the Non-Ionizing Energy Loss, is a good approximation to the present data. At incident proton and neutron energies well above 0.1 GeV the radiation damage is dominated by the inelastic cross section, while at non-relativistic energies the elastic cross section prevails. The smaller inelastic nucleon-carbon cross section and the light nuclear fragments imply that at high energies diamond is an order of magnitude more radiation hard than silicon, while at energies below 0.1 GeV the difference becomes significantly smaller. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:3004 / 3010
页数:7
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