Heater system optimization for robust ePCM reliability and scalability in 28nm FDSOI technology

被引：3

作者：

Ranica, R. ^{[1
]}

Berthelon, R. ^{[1
]}

Gandolfo, A. ^{[2
]}

Samanni, G. ^{[2
]}

Gomiero, E. ^{[2
]}

Jasse, J. ^{[2
]}

Mattavelli, P. ^{[2
]}

Sandrini, J. ^{[1
]}

Querre, M. ^{[1
]}

Le-Friec, Y. ^{[1
]}

Poulet, J. ^{[1
]}

Caubet, V ^{[1
]}

Favennec, L. ^{[1
]}

Boccaccio, C. ^{[1
]}

Ghezzi, G. ^{[1
]}

Gallon, C. ^{[1
]}

Grenier, J. C. ^{[1
]}

Dumont, B. ^{[1
]}

Weber, O. ^{[1
]}

Villaret, A. ^{[1
]}

Beneyton, R. ^{[1
]}

Cherault, N. ^{[1
]}

Ristoiu, D. ^{[1
]}

Del Medico, S. ^{[1
]}

Kermarrec, O. ^{[1
]}

Reynard, J. P. ^{[1
]}

Boivin, P. ^{[3
]}

Souhaite, A. ^{[4
]}

Desvoivres, L. ^{[4
]}

Chouteau, S. ^{[1
]}

Sassoulas, P. O. ^{[1
]}

Clement, L. ^{[1
]}

Valery, A. ^{[1
]}

Petroni, E. ^{[2
]}

Turgis, D. ^{[1
]}

Lippiello, A. ^{[1
]}

Scotti, L. ^{[1
]}

Disegni, F. ^{[2
]}

Ventre, A. ^{[2
]}

Ornaghi, D. ^{[2
]}

De Tomasi, M. ^{[2
]}

Maurelli, A. ^{[2
]}

Conte, A. ^{[3
]}

Arnaud, F. ^{[1
]}

Redaelli, A. ^{[2
]}

Annunziata, R. ^{[2
]}

Cappelletti, P. ^{[2
]}

Piazza, F. ^{[1
]}

Ferreira, P. ^{[1
]}

Gonella, R. ^{[1
]}

机构：

[1] STMICROELECTRONICS, Crolles, France

[2] STMICROELECTRONICS, Agrate Brianza, Italy

[3] STMICROELECTRONICS, Rousset, France

[4] CEA LETI, Grenoble, France

来源：

2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2021年

关键词：

D O I：

10.1109/IEDM19574.2021.9720669

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

One of the most promising Embedded Phase Change Memory (ePCM) integration scheme is the wall architecture, which relies on the dedicated Heater element to thermally switch the device. A good control of this element is a key factor to satisfy the performance requirements of the automotive market. In this paper, the optimization of TiSiN Heater system in 0.019 mu m(2) ePCM cell realized with 28nm FDSOI technology is extensively reported. Key fabrication parameters defining heating efficiency are investigated, covering a large range of Heater resistance. Their impact on ePCM reliability of elementary device and 16MB memory array, considering both retention and endurance, is characterized and the key role played by Heater is demonstrated, opening a path to scaled programming currents. Finally, TiSiN ALD deposition process is proposed as the solution to improve uniformity and scalability of Heater resistance. As Heater is the variable controlling the whole system, this approach guarantees the robustness of ePCM technology for automotive grade-0 applications.

引用

页数：4

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