Influence of the Spin-Orbit Interaction on the Magnetotransport Properties of a Two-Dimensional Electron System

被引:0
作者
Cangas, R. [1 ]
Hidalgo, M. A. [2 ]
机构
[1] Univ Politecn Madrid, Dept Fis, Escuela Tecn Super Ingn & Diseno Ind, E-28040 Madrid, Spain
[2] Univ Alcala de Henares, Dept Fis & Matemat, Alcala De Henares, Madrid, Spain
关键词
Rashba spin-orbit coupling; quantum hall effect; Shubnikov-de Haas oscillations; InGaAs/InAlAs heterostructure; QUANTUM; CYCLOTRON; RESONANCE; RASHBA;
D O I
10.1142/S2010324715300030
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this paper, we review the contribution of the Rashba spin-orbit coupling to the magneto-conduction of a two-dimensional electron system (2DES) confined in an inversion layer under quantum Hall regime (low temperature and low defects and impurities). The study is based on a semi-classical model for the magnetoconductivities of the 2DES. This model reproduces the measurements of the Shubnikov-de Haas (SdH) oscillations obtained in systems confined in III-V heterostructures, and also the quantum Hall magnetoconductivity (magnetoresistivity). We also discuss the Rashba and Zeeman competition and its effect on the magnetoconductivity.
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页数:13
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共 36 条
[1]   ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].
ANDO, T ;
FOWLER, AB ;
STERN, F .
REVIEWS OF MODERN PHYSICS, 1982, 54 (02) :437-672
[2]  
Andrada A., 1992, PHYS REV B, V42, P1921
[3]  
[Anonymous], 1960, Sov Phys Solid State
[4]  
Ashcroft N. W., 1981, SOLID STATE PHYS
[5]  
Askerov B. M., 1994, ELECT TRANSPORT PHEN
[6]  
Barnham K.W. J., 2001, Low-Dimensional Semiconductor Structures, DOI DOI 10.1017/CBO9780511624247
[7]  
Bastard G., 1990, Wave Mechanics Applied to Semiconductor Heterostructure
[8]   OSCILLATORY EFFECTS AND THE MAGNETIC-SUSCEPTIBILITY OF CARRIERS IN INVERSION-LAYERS [J].
BYCHKOV, YA ;
RASHBA, EI .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (33) :6039-6045
[9]  
Can-MingHu, 1999, PHYS REV B, V60, P7736
[10]   Magnetoconduction in a two-dimensional system confined in wurtzite AlxGa1-xN/GaN heterostructure [J].
Cangas, R. ;
Hidalgo, M. A. .
APPLIED PHYSICS LETTERS, 2013, 102 (16)