Segregation-assisted phase transformation and anti-phase boundary formation during creep of a γ′-strengthened Co-based superalloy at high temperatures

被引:36
|
作者
Lu, Song [1 ]
Antonov, Stoichko [1 ,2 ]
Xue, Fei [1 ,3 ]
Li, Longfei [1 ]
Feng, Qiang [1 ]
机构
[1] Univ Sci & Technol Beijing, Beijing Adv Innovat Ctr Mat Genome Engn, State Key Lab Adv Met & Mat, Beijing 100083, Peoples R China
[2] Max Planck Inst Eisenforsch GmbH, Dept Microstruct Phys & Alloy Design, D-40237 Dusseldorf, Germany
[3] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
基金
中国国家自然科学基金;
关键词
Co-based superalloys; Creep; Segregation; Stacking faults; Anti-phase boundary; SINGLE-CRYSTAL SUPERALLOYS; STACKING-FAULT; DISLOCATION NUCLEATION; SOLUTE SEGREGATION; MINIMUM CREEP; DEFECTS; DEFORMATION; PERFORMANCE; MECHANISMS; STABILITY;
D O I
10.1016/j.actamat.2021.117099
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this study, the creep defects and segregation-assisted local phase transformation processes in a gamma '-strengthened Co-based superalloy crept at 982 degrees C/248 MPa-1% and 1000 degrees C/137 MPa-1% were analyzed. A non-coplanar deformation configuration, i.e. a repetition of superlattice intrinsic stacking faults and antiphase boundaries (...SISF-APB...), was discovered in a Ni-free Co-based alloy, and found to be assisted by the local elemental segregation and favored more at higher stress conditions. A SISF with a/6<1<(1)over bar>2> type displacement in the ((1)over bar>11) plane and APB with a/2<110> type displacement nucleating in the (1 (1) over bar1) plane were observed to be connected. The gamma ' former segregation-assisted local gamma '->gamma phase transformation process near LPD was estimated to evolve in the order: gamma '-> metastable gamma ->gamma+gamma '(1). The formation of metastable gamma generates a new gamma/gamma ' interface with misfit strain/stress, which is responsible for the nucleation of dislocations, accompanied by the creep stress, thus generating APBs in the gamma ' phases. The separation of gamma and gamma '(1) seems to occur by a directional redistribution of gamma and gamma ' formers along the near-((1) over bar 11) plane and toward the SISF side. The W segregation-assisted gamma '->chi phase transformation along the planar fault is estimated to decrease the deformation resistance by forming SISFs with single-layer a/6<112> type displacement, while the Co segregation-assisted gamma '->gamma phase transformation at the LPD is believed to improve the deformation resistance by trapping the moving dislocation at the local gamma/gamma ' interface. (C) 2021 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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页数:11
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