Mobility and Decay Dynamics of Charge Carriers in One-Dimensional Selenium van der Waals Solid

被引：12

作者：

Bhaskar, Prashant ^{[1
]}

Achtstein, Alexander W. ^{[1
,2
]}

Diedenhofen, Silke L. ^{[1
]}

Siebbeles, Laurens D. A. ^{[1
]}

机构：

[1] Delft Univ Technol, Optoelect Mat Sect, Dept Chem Engn, Van der Maasweg 9, NL-2629 HZ Delft, Netherlands

[2] Tech Univ Berlin, Inst Opt & Atomare Phys, Str 17 Juni 135, D-10623 Berlin, Germany

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2017年 / 121卷 / 34期

关键词：

RESOLVED MICROWAVE CONDUCTIVITY; FIELD-EFFECT TRANSISTORS; TRIGONAL SELENIUM; SINGLE-CRYSTALS; CONJUGATED POLYMERS; BLACK PHOSPHORUS; RAMAN-SPECTRA; CHAINS; RECOMBINATION; NANOCHANNELS;

D O I：

10.1021/acs.jpcc.7b05183

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Trigonal selenium is a semiconducting van der Waals solid that consists of helical atomic chains. We studied the mobility and decay dynamics of excess electrons and holes moving along the selenium chains. Excess charge carriers were generated by irradiation of powdered selenium with 3 MeV electron pulses. Their mobility and decay via trapping or recombination was studied by time-resolved microwave conductivity measurements as a function of temperature. The mobility of charge carriers along the Se chains is at least ca. 0.5 cm(2).V-1.s(-1) at room temperature. Charges decay predominantly by trapping at defects. The appreciable mobility, together with the potential for large-scale production of Se wires by liquid exfoliation, makes this material of great interest for use in nanoelectronics.

引用

页码：18917 / 18921

页数：5

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