Low temperature (100 °C) atomic layer deposited-ZrO2 for recessed gate GaN HEMTs on Si

被引：12

作者：

Byun, Young-Chul ^{[1
]}

Lee, Jae-Gil ^{[1
,2
]}

Meng, Xin ^{[3
]}

Lee, Joy S. ^{[1
]}

Lucero, Antonio T. ^{[1
]}

Kim, Si Joon ^{[1
]}

Young, Chadwin D. ^{[1
]}

Kim, Moon J. ^{[1
]}

Kim, Jiyoung ^{[1
,3
]}

机构：

[1] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA

[2] Seoul Natl Univ, Dept Elect & Comp Engn, Seoul 151747, South Korea

[3] Univ Texas Dallas, Dept Elect Engn, Richardson, TX 75080 USA

来源：

APPLIED PHYSICS LETTERS | 2017年 / 111卷 / 08期

关键词：

POWER ELECTRONICS APPLICATIONS; FIELD-EFFECT TRANSISTORS; NORMALLY-OFF; LEAKAGE-CURRENT; HIGH-VOLTAGE; THIN-FILMS; ALGAN/GAN; INTERFACE; MODE; HFO2;

D O I：

10.1063/1.4998729

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, the effect of atomic layer deposited ZrO2 gate dielectrics, deposited at low temperature (100 degrees C), on the characteristics of recessed-gate High Electron Mobility Transistors (HEMTs) on Al0.25Ga0.75N/GaN/Si is investigated and compared with the characteristics of those with ZrO2 films deposited at typical atomic layer deposited (ALD) process temperatures (250 degrees C). Negligible hysteresis (Delta V-th < 20 mV), low gate leakage current (I-g@ 2V = 6.6 x 10(-6) A/cm(2)), high breakdown voltage (> 4 V), and low interfacial state density (D-it = 3.69 x 10(-11) eV(-1) cm(-2)) were observed on recessed gate HEMTs with similar to 5nm ALD-ZrO2 films grown at 100 degrees C. The excellent properties of recessed gate HEMTs are due to the absence of an interfacial layer and an amorphous phase of the film. An interfacial layer between 250 degrees C-ZrO2 and GaN is observed via high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy. However, 100 degrees C-ZrO2 and GaN shows no significant interfacial layer formation. Moreover, while 100 degrees C-ZrO2 films maintain an amorphous phase on either substrate (GaN and Si), 250 degrees C-ZrO2 films exhibit a polycrystalline-phase when deposited on GaN and an amorphous phase when deposited on Si. Contrary to popular belief, the low-temperature ALD process for ZrO2 results in excellent HEMT performance. Published by AIP Publishing.

引用

页数：5

共 50 条

[1] Enhancement mode AlGaN/GaN MOS high-electron-mobility transistors with ZrO2 gate dielectric deposited by atomic layer deposition [J].

Anderson, Travis J. ;

Wheeler, Virginia D. ;

Shahin, David I. ;

Tadjer, Marko J. ;

Koehler, Andrew D. ;

Hobart, Karl D. ;

Christou, Aris ;

Kub, Francis J. ;

Eddy, Charles R., Jr. .

APPLIED PHYSICS EXPRESS, 2016, 9 (07)

[2] High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8 nm equivalent oxide thickness [J].

Barth, Michael ;

Rayner, G. Bruce, Jr. ;

McDonnell, Stephen ;

Wallace, Robert M. ;

Bennett, Brian R. ;

Engel-Herbert, Roman ;

Datta, Suman .

APPLIED PHYSICS LETTERS, 2014, 105 (22)

[3] In situ atomic layer deposition half cycle study of Al2O3 growth on AlGaN [J].

Brennan, Barry ;

Qin, Xiaoye ;

Dong, Hong ;

Kim, Jiyoung ;

Wallace, Robert M. .

APPLIED PHYSICS LETTERS, 2012, 101 (21)

[4]

Brews J R, 1982, PHYS TECHNOLOGY

[5] Interfacial and electrical properties of HfO2 gate dielectrics grown on GaAs by atomic layer deposition using different oxidants [J].

Byun, Young-Chul ;

Mahata, Chandreswar ;

An, Chee-Hong ;

Oh, Jungwoo ;

Choi, Rino ;

Kim, Hyoungsub .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2012, 45 (43)

[6] Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transistors [J].

Capriotti, M. ;

Treidel, E. Bahat ;

Fleury, C. ;

Bethge, O. ;

Ostermaier, C. ;

Rigato, M. ;

Lancaster, S. L. C. ;

Brunner, F. ;

Detz, H. ;

Hilt, O. ;

Wuerfl, J. ;

Pogany, D. ;

Strasser, G. .

SOLID-STATE ELECTRONICS, 2016, 125 :118-124

[7] Atomic-layer-deposited Al2O3 and HfO2 on GaN: A comparative study on interfaces and electrical characteristics [J].

Chang, Y. C. ;

Huang, M. L. ;

Chang, Y. H. ;

Lee, Y. J. ;

Chiu, H. C. ;

Kwo, J. ;

Hong, M. .

MICROELECTRONIC ENGINEERING, 2011, 88 (07) :1207-1210

[8] High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2 [J].

Choi, Woojin ;

Seok, Ogyun ;

Ryu, Hojin ;

Cha, Ho-Young ;

Seo, Kwang-Seok .

IEEE ELECTRON DEVICE LETTERS, 2014, 35 (02) :175-177

[9] Correlation of Charge Buildup and Stress-Induced Leakage Current in Cerium Oxide Films Grown on Ge (100) Substrates [J].

Evangelou, Evangelos K. ;

Rahman, Shahinur ;

Dimoulas, A. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (03) :399-407

[10] 18-GHz 3.65-W/mm Enhancement-Mode AlGaN/GaN HFET Using Fluorine Plasma Ion Implantation [J].

Feng, Z. H. ;

Zhou, R. ;

Xie, S. Y. ;

Yin, J. Y. ;

Fang, J. X. ;

Liu, B. ;

Zhou, W. ;

Chen, Kevin J. ;

Cai, S. J. .

IEEE ELECTRON DEVICE LETTERS, 2010, 31 (12) :1386-1388

← 1 2 3 4 5 →