High-power UV InCaN/AlGaN double-heterostructure LEDs

被引：162

作者：

Mukai, T ^{[1
]}

Morita, D ^{[1
]}

Nakamura, S ^{[1
]}

机构：

[1] Nichia Chem Ind Ltd, Dept Res & Dev, Tokushima 774, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

关键词：

LED; InGaN; GaN; UV; MOCVD;

D O I：

10.1016/S0022-0248(98)00292-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Ultraviolet (UV) InGaN/AlGaN double-heterostructure (DH) light-emitting diodes (LEDs) with an external quantum efficiency of 7.5%, an output power of 5 mW and an emission wavelength of 371 nm were developed. High-power UV LEDs are obtained using an InGaN active layer with a thickness of 400 Angstrom instead of a GaN active layer. The localized energy states caused by In composition fluctuation in the InGaN active layer are related to the high efficiency of the InGaN-based LEDs. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：778 / 781

页数：4

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