Electromigration in narrow and large damascene copper lines

被引：1

作者：

Girault, V ^{[1
]}

Terrier, F ^{[1
]}

Grégoire, M ^{[1
]}

机构：

[1] STMicroelect, Crolles Alliance 2, CR&D Labs, F-38926 Crolles, France

来源：

2004 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT | 2004年

关键词：

copper interconnects; electrornigration; activation energy;

D O I：

10.1109/IRWS.2004.1422742

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a study on electromigration performances of narrow and wide damascene copper lines in the view to always be aware of limitation of circuit lifetime with respect to this failure mechanism. It appears that narrow and large lines do not present the same activation energy. Narrow lines are characterized by a rather high activation energy, around 0.90eV referring to copper migration at the copper/top barrier interface, whereas large lines present an activation energy around 0.74eV apparently referring to copper migration at the gain boundaries. These experimental results suggest a careful choice in interconnect design depending on the circuit application (digital/analogical) to always provide robust circuit.

引用

页码：71 / 74

页数：4

共 4 条

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[4]

VONGLASOW A, 2003, INT INT TECHN C P

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