1.95 μm compressively strained InGaAs/InGaAsP quantum well DFB laser with low threshold

In this study, we demonstrate the growth of highly compressively strained InGaAs/InGaAsP quantum well structures with large well thickness by low pressure metalorganic chemical vapor deposition for extending the emission wavelength of lasers. By comparing the photoluminescence characteristics of quantum welts grown at different temperatures, it is clarified that a relatively high quality quantum well layer emitting at 2.0 mu m can be obtained at a growth temperature of 650 degrees C. 1.95-mu m-wavelength InGaAs/InGaAsP highly compressively strained quantum well DFB laser for laser spectroscopy monitors was also fabricated Double quantum-well DFB laser operating at 1.95 mu m exhibits threshold currents as low as 6 mA and 6.2 mW maximum output powers. 2.04-mu m-wavelength DFB laser is also described.