1.95 μm compressively strained InGaAs/InGaAsP quantum well DFB laser with low threshold

被引：0

作者：

Dong, J ^{[1
]}

Ubukata, A ^{[1
]}

Matsumoto, K ^{[1
]}

机构：

[1] Nippon Sanso Corp, Tsukuba Lab, Tsukuba, Ibaraki 30026, Japan

来源：

INFRARED APPLICATIONS OF SEMICONDUCTORS II | 1998年 / 484卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, we demonstrate the growth of highly compressively strained InGaAs/InGaAsP quantum well structures with large well thickness by low pressure metalorganic chemical vapor deposition for extending the emission wavelength of lasers. By comparing the photoluminescence characteristics of quantum welts grown at different temperatures, it is clarified that a relatively high quality quantum well layer emitting at 2.0 mu m can be obtained at a growth temperature of 650 degrees C. 1.95-mu m-wavelength InGaAs/InGaAsP highly compressively strained quantum well DFB laser for laser spectroscopy monitors was also fabricated Double quantum-well DFB laser operating at 1.95 mu m exhibits threshold currents as low as 6 mA and 6.2 mW maximum output powers. 2.04-mu m-wavelength DFB laser is also described.

引用

页码：643 / 648

页数：6

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