Interfacial characteristics of Au/Al2O3/InP metal-insulator-semiconductor diodes

被引：9
作者：
Kim, Hogyoung [1 ]
Kim, Yong [2 ]
Choi, Byung Joon [2 ]
机构：
[1] Seoul Natl Univ Sci & Technol Seoultech, Dept Visual Opt, Seoul 139743, South Korea
[2] Seoul Natl Univ Sci & Technol Seoultech, Dept Mat Sci & Engn, Seoul 139743, South Korea
来源：
AIP ADVANCES | 2018年 / 8卷 / 09期
基金：
新加坡国家研究基金会;
关键词：
RAY PHOTOELECTRON-SPECTROSCOPY; ATOMIC LAYER DEPOSITION; INP; OXIDES; XPS; PASSIVATION; SURFACES;
D O I：
10.1063/1.5047538
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The interfacial properties of Au/n-InP contacts with a thin layer of Al2O3 (0.7 or 2.7 nm) deposited by atomic layer deposition (ALD) were investigated using temperature-dependent current-voltage (I-V-T) and depth-resolved X-ray photoelectron spectroscopy (XPS) measurements. Schottky barrier inhomogeneity provided a good description of the charge transport at the interface of all the samples. Based on XPS analysis, the removal of native oxide occurred due to a self-cleaning effect via the ALD process, especially for the thicker Al2O3 layer. The significant diffusion of In into the Al2O3 of the thinner layer may have formed In2O3 and degraded the Al2O3 film. XPS analysis also showed that with increasing Al2O3 thickness, emission from In2O3 decreased while that from InPO4 increased. (C) 2018 Author(s).
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页数：8
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