Enhancement of integrity of polysilicon oxide by using a combination of N2O nitridation and CMP process

被引：0

作者：

Lei, TF ^{[1
]}

Chen, JH

Wang, MF

Chao, TS

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu, Taiwan

[3] Natl Nano Device Lab, Hsinchu, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 1999年 / 20卷 / 05期

关键词：

Number:; 88-2215-E009-045; Acronym:; NSC; Sponsor: National Science Council;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work prepares and demonstrates, for the first time, a high-quality polysilicon oxide, by combining N2O nitridation and Chemical Mechanical Polishing (CMP) process. Our results demonstrate that capacitors with this process have an improved Q(bd) (charge-to-breakdown) due to the planar surface and more concentrated nitrogen at the interface of polysilicon oxide.

引用

页码：235 / 237

页数：3

共 8 条

[1]

CANDELIER P, 1995, IEEE ELECT DEVICES L, V16, P385

[2] CHARACTERIZATION OF THERMALLY OXIDIZED N+ POLYCRYSTALLINE SILICON [J].