VCO design for 60 GHz applications using differential shielded inductors in 0.13 μm CMOS

被引：0

作者：

Borremans, J. ^{[1
,2
]}

Dehan, M. ^{[1
]}

Scheir, K. ^{[1
,2
]}

Kuijk, M. ^{[2
]}

Wambacq, P. ^{[1
,2
]}

机构：

[1] IMEC, Louvain, Belgium

[2] Vrije Univ Brussel, Brussels, Belgium

来源：

2008 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, VOLS 1 AND 2 | 2008年

关键词：

CMOS; 60; GHz; slow-wave; transmission line; scaling; VCO; RF;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

With the increasing interest in 60 GHz applications, low-cost CMOS circuit solutions emerge. The poor performance of CMOS devices at millimeter-wave frequencies complicates the design. In this work, we present two low-area VCOs covering the license-free 60 GHz band, using differential shielded (slow-wave) transmission line inductors. We discuss design and provide compact modeling of these inductors, compatible with stringent metal density rules of scaled CMOS. Measured phase noise below -90 dBc/Hz at 1 MHz offset is achieved, at a consumption of 3.9 mW at 1 V. The tuning range exceeds 10%, for a tuning voltage restricted from ground to the supply.

引用

页码：119 / +

页数：2

共 8 条

[1] Shielded passive devices for silicon-based monolithic microwave and millimeter-wave integrated circuits [J].