Deposition of nanocrystalline translucent h-BN films by chemical vapor deposition at high temperature

被引：16

作者：

Younes, Ghassan ^{[2
]}

Ferro, Gabriel ^{[1
]}

Soueidan, Maher ^{[3
,4
]}

Brioude, Arnaud ^{[1
]}

Souliere, Veronique ^{[1
]}

Cauwet, Francois ^{[1
]}

机构：

[1] Univ Lyon 1, Lab Multimat & Interfaces, UMR 5615, FR-69622 Villeurbanne, France

[2] Beirut Arab Univ, Fac Sci, Dept Chem, Beirut, Lebanon

[3] Lebanese Atom Energy Commissioncph CNRS, Beirut 11072260, Lebanon

[4] Univ Lyon, INSA Lyon, AMPERE UMR 5005, F-69621 Villeurbanne, France

来源：

THIN SOLID FILMS | 2012年 / 520卷 / 07期

关键词：

Boron nitride; Chemical vapor deposition; High temperature; Translucent coatings; Nano-crystallinity; Silicon carbide; Sapphire; BORON-NITRIDE FILMS; THICK-FILM; CRYSTALS;

D O I：

10.1016/j.tsf.2011.09.082

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

h-BN layers were deposited on alpha-SiC and sapphire substrates by chemical vapor deposition at high temperature (1500-1900 degrees C) using B2H6 and NH3 diluted in Ar. Growth rates were in the 6-10 mu m/h range. In all the conditions studied, the as deposited BN layers were found to be translucent to light, some having a light whitish aspect and other a more yellowish one. It was also observed that the deposit was not always adhesive. Characterizations showed that the layers were nano-crystalline with crystallite size <10 nm. The growth rate was found to be temperature and N/B ratio dependent due to an N limited growth regime which is more pronounced above 1700 degrees C. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：2424 / 2428

页数：5

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